All MOSFET. PD506BA Datasheet

 

PD506BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PD506BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34.7 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO252

 PD506BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PD506BA Datasheet (PDF)

 ..1. Size:524K  unikc
pd506ba.pdf

PD506BA
PD506BA

PD506BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6m @VGS = 10V30V 70ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C70IDContinuous Drain Current2TC = 100 C44AIDM160Pulsed Drain Current

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