PD506BA Specs and Replacement
Type Designator: PD506BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
PD506BA substitution
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PD506BA datasheet
pd506ba.pdf
PD506BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6m @VGS = 10V 30V 70A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TC = 25 C 70 ID Continuous Drain Current2 TC = 100 C 44 A IDM 160 Pulsed Drain Current... See More ⇒
Detailed specifications: PT542BA, PD632BA, PD636BA, PD648BA, PD696BA, PD6A8BA, PD485BA, PD504BA, BS170, PD510BA, PD516BA, PD517BA, PD533BA, PD537BA, PD548BA, PD570BA, PD612BA
Keywords - PD506BA MOSFET specs
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