All MOSFET. PD510BA Datasheet

 

PD510BA Datasheet and Replacement


   Type Designator: PD510BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 92 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 354 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO252
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PD510BA Datasheet (PDF)

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PD510BA

PD510BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.3m @VGS = 10V30V 92ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C92IDContinuous Drain Current2TC = 100 C58AIDM180Pulsed Drain Curre

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History: IRF630H | 2SK1336 | 2SK4027 | 12N60AF | P1070ATFS | ELM13418CA | SJMN250R80ZW

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