All MOSFET. PD517BA Datasheet

 

PD517BA Datasheet and Replacement


   Type Designator: PD517BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 376 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
 

 PD517BA substitution

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PD517BA Datasheet (PDF)

 ..1. Size:478K  unikc
 pd517ba.pdf pdf_icon

PD517BA

PD517BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID12m @VGS = -10V-55A-30VTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30 VVGSGate-Source Voltage 20 VTC= 25 C-55IDContinuous Drain Current2TC= 100 C-35AIDM-150Pulsed Drain

 ..2. Size:223K  niko-sem
 pd517ba.pdf pdf_icon

PD517BA

P-Channel Enhancement Mode PD517BA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 12m -55A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V TC = 2

Datasheet: PD648BA , PD696BA , PD6A8BA , PD485BA , PD504BA , PD506BA , PD510BA , PD516BA , P0903BDG , PD533BA , PD537BA , PD548BA , PD570BA , PD612BA , PD628BA , P0806AT , P0806ATF .

History: IXUN350N10 | RU1HC2H | HAT2080T | YJD45P03A | HM2309DR | 6N60KG-TA3-T | NCEP6016AS

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