PD612BA Specs and Replacement
Type Designator: PD612BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO252
PD612BA substitution
- MOSFET ⓘ Cross-Reference Search
PD612BA datasheet
pd612ba.pdf
PD612BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 47A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 47 ID Continuous Drain Current2 TC= 100 C 30 A IDM 120 Pulsed Drain Current1 ... See More ⇒
Detailed specifications: PD506BA, PD510BA, PD516BA, PD517BA, PD533BA, PD537BA, PD548BA, PD570BA, SI2302, PD628BA, P0806AT, P0806ATF, P0806ATX, P0808ATG, P082ABD8, P0850AT, P0850ATF
Keywords - PD612BA MOSFET specs
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