All MOSFET. PD612BA Datasheet

 

PD612BA Datasheet and Replacement


   Type Designator: PD612BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
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PD612BA Datasheet (PDF)

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PD612BA

PD612BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 47ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C47IDContinuous Drain Current2TC= 100 C30AIDM120Pulsed Drain Current1

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History: BSZ035N03LSG

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