All MOSFET. P0806AT Datasheet

 

P0806AT Datasheet and Replacement


   Type Designator: P0806AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 466 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO220
 

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P0806AT Datasheet (PDF)

 ..1. Size:425K  unikc
 p0806at.pdf pdf_icon

P0806AT

P0806ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 8.5m @VGS = 10V 82ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 25TC = 25 C82IDContinuous Drain Current2TC = 100 C52AIDM246Pulsed Drain Current

 0.1. Size:342K  unikc
 p0806atx.pdf pdf_icon

P0806AT

P0806ATXN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 8m @VGS = 10V 110ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C110IDContinuous Drain Current1TC = 100 C69AIDM300Pulsed Drain Current2IASAvalanche Current 102

 0.2. Size:353K  unikc
 p0806atf.pdf pdf_icon

P0806AT

P0806ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 8.5m @VGS = 10V 57ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 25 VTC = 25 C57IDContinuous Drain CurrentTC = 100 C36AIDMPulsed Drain Current 220IASAvalanche Current 64EA

Datasheet: PD516BA , PD517BA , PD533BA , PD537BA , PD548BA , PD570BA , PD612BA , PD628BA , 18N50 , P0806ATF , P0806ATX , P0808ATG , P082ABD8 , P0850AT , P0850ATF , P085AATX , P0903BD .

History: NTMFS4C028N | IPB020NE7N3G

Keywords - P0806AT MOSFET datasheet

 P0806AT cross reference
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