P0806AT - аналоги, параметры транзистора - Справочник транзисторов

P0806AT даташит

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P0806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 8.5m @VGS = 10V 82A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 25 TC = 25 C 82 ID Continuous Drain Current2 TC = 100 C 52 A IDM 246 Pulsed Drain Current

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P0806ATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 8m @VGS = 10V 110A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 110 ID Continuous Drain Current1 TC = 100 C 69 A IDM 300 Pulsed Drain Current2 IAS Avalanche Current 102

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P0806ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 8.5m @VGS = 10V 57A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 25 V TC = 25 C 57 ID Continuous Drain Current TC = 100 C 36 A IDM Pulsed Drain Current 220 IAS Avalanche Current 64 EA

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