All MOSFET. P0808ATG Datasheet

 

P0808ATG Datasheet and Replacement


   Type Designator: P0808ATG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 89 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 243 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

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P0808ATG Datasheet (PDF)

 ..1. Size:340K  unikc
 p0808atg.pdf pdf_icon

P0808ATG

P0808ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID75V 8m @VGS = 10V 89ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C89IDContinuous Drain Current1TC = 100 C63AIDM250Pulsed Drain Current2IASAvalanche Current 85EA

 9.1. Size:545K  supertex
 vp0808.pdf pdf_icon

P0808ATG

Supertex inc. VP0808P-Channel Enhancement-ModeVertical DMOS FETsFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power

Datasheet: PD537BA , PD548BA , PD570BA , PD612BA , PD628BA , P0806AT , P0806ATF , P0806ATX , IRFB31N20D , P082ABD8 , P0850AT , P0850ATF , P085AATX , P0903BD , P0903BDA , P0903BDB , P0903BDG .

History: LSE65R099GT | IPB120N08S4-03 | C3M0065100K | CS65N20-30 | IXFV110N10P | DMG8880LSS | SQM90142E

Keywords - P0808ATG MOSFET datasheet

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