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P0808ATG Specs and Replacement

Type Designator: P0808ATG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 89 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 243 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

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P0808ATG datasheet

 ..1. Size:340K  unikc
 p0808atg.pdf pdf_icon

P0808ATG

P0808ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 75V 8m @VGS = 10V 89A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 89 ID Continuous Drain Current1 TC = 100 C 63 A IDM 250 Pulsed Drain Current2 IAS Avalanche Current 85 EA... See More ⇒

 9.1. Size:545K  supertex
 vp0808.pdf pdf_icon

P0808ATG

Supertex inc. VP0808 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power ... See More ⇒

Detailed specifications: PD537BA, PD548BA, PD570BA, PD612BA, PD628BA, P0806AT, P0806ATF, P0806ATX, IRF2807, P082ABD8, P0850AT, P0850ATF, P085AATX, P0903BD, P0903BDA, P0903BDB, P0903BDG

Keywords - P0808ATG MOSFET specs

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