P0850AT MOSFET Datasheet: N-Ch, 500V, 8A. Full specification with pinout and replacement list

P0850AT Specs and Replacement

Type Designator: P0850AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220

P0850AT substitution

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P0850AT datasheet

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P0850AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 0.85 @VGS = 10V 8A TO-220 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 TC = 25 C 8 ID Continuous Drain Current2 TC = 100 C 5 A IDM 30 Pulsed Drain Current1 ... See More ⇒

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P0850ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 0.85 @VGS = 10V 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 TC = 25 C 8 ID Continuous Drain Current2 TC = 100 C 5 A IDM 30 Pulsed Drain Current... See More ⇒

Detailed specifications: PD570BA, PD612BA, PD628BA, P0806AT, P0806ATF, P0806ATX, P0808ATG, P082ABD8, IRFZ24N, P0850ATF, P085AATX, P0903BD, P0903BDA, P0903BDB, P0903BDG, P0903BDL, P0603BD