All MOSFET. P0850AT Datasheet

 

P0850AT Datasheet and Replacement


   Type Designator: P0850AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 138 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220
 

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P0850AT Datasheet (PDF)

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P0850AT

P0850ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 0.85 @VGS = 10V 8ATO-220ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C8IDContinuous Drain Current2TC = 100 C5AIDM30Pulsed Drain Current1

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P0850AT

P0850ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 0.85 @VGS = 10V 8ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C8IDContinuous Drain Current2TC = 100 C5AIDM30Pulsed Drain Current

Datasheet: PD570BA , PD612BA , PD628BA , P0806AT , P0806ATF , P0806ATX , P0808ATG , P082ABD8 , IRFZ24N , P0850ATF , P085AATX , P0903BD , P0903BDA , P0903BDB , P0903BDG , P0903BDL , P0603BD .

Keywords - P0850AT MOSFET datasheet

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