P0690ATFS MOSFET. Datasheet pdf. Equivalent
Type Designator: P0690ATFS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 89 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.35 Ohm
Package: TO220FS
P0690ATFS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0690ATFS Datasheet (PDF)
p0690atf-s.pdf
P0690ATF / P0690ATFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.35 @VGS = 10V900V 6ATO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 900VVGSGate-Source Voltage 30TC = 25 C6IDContinuous Drain Current2TC = 100 AC3.5IDM
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXTH500N04T2
History: IXTH500N04T2
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