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P9006EL PDF Specs and Replacement


   Type Designator: P9006EL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 3.125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT223
 

 P9006EL substitution

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P9006EL PDF Specs

 ..1. Size:365K  unikc
p9006el.pdf pdf_icon

P9006EL

P9006EL P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90m @VGS = 10V -4A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C -4 ID Continuous Drain Current1 TA = 100 C -2.7 A IDM -30 Pulsed Drain Current2 IAS Avalanche Current ... See More ⇒

 8.1. Size:250K  cystek
mtp9006e3.pdf pdf_icon

P9006EL

Spec. No. C733E3 Issued Date 2010.07.09 CYStech Electronics Corp. Revised Date Page No. 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTP9006E3 ID -10A 95m Features RDSON(MAX) Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTP9006E3 G Gate D Drain S Source... See More ⇒

 8.2. Size:361K  unikc
p9006ei.pdf pdf_icon

P9006EL

P9006EI P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -18A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C -18 ID Continuous Drain Current1 TC = 100 C -11 A IDM -50 Pulsed Drain Current2 IAS Avalanche Current ... See More ⇒

 8.3. Size:456K  unikc
p9006esg.pdf pdf_icon

P9006EL

P9006ESG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90m @VGS = 10V -60V -18A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -18 ID Continuous Drain Current TC = 100 C -12 A IDM -48 Pulsed Drain... See More ⇒

Detailed specifications: P0690ATFS , P06B03LVG , P06P03LCG , P06P03LCGA , P06P03LDG , P06P03LVG , P9006EDG , P9006EI , IRFP460 , P9006ESG , P9006ETF , P9006EVG , P0703BD , P0703ED , P0703EV , P0765ATF , P0765GTF .

Keywords - P9006EL MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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