P0703ED
MOSFET. Datasheet pdf. Equivalent
Type Designator: P0703ED
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 68
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 118
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 995
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
TO252
P0703ED
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0703ED
Datasheet (PDF)
..1. Size:487K unikc
p0703ed.pdf
P0703EDP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID7.5m @VGS = -10V-68A-30VTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30 VVGSGate-Source Voltage 25 VTC= 25 C-68IDContinuous Drain Current2TC= 100 C-43AIDM-160
8.1. Size:494K unikc
p0703ev.pdf
P0703EVP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID7.5m @VGS = -10V-30V -15ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TA = 25 C-15IDContinuous Drain CurrentTA = 70 C-11AIDM-67Pu
9.1. Size:527K unikc
p0703bd.pdf
P0703BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID7.5m @VGS = 10V30V 57ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C57IDContinuous Drain CurrentTC= 100 C36AIDM160Pulsed Drain Current1
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