All MOSFET. P0803BDG Datasheet

 

P0803BDG MOSFET. Datasheet pdf. Equivalent


   Type Designator: P0803BDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO252

 P0803BDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P0803BDG Datasheet (PDF)

 ..1. Size:530K  unikc
 p0803bdg.pdf

P0803BDG P0803BDG

P0803BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.2m @VGS = 10V30V 60ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C60IDContinuous Drain CurrentTC= 100 C38AIDM120Pulsed Drain Current1

 8.1. Size:372K  unikc
 p0803bvg.pdf

P0803BDG P0803BDG

P0803BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 8m @VGS = 10V 13ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C13IDContinuous Drain CurrentTA = 70 C8AIDM50Pulsed Drain Current1IASAvalanche Current 50EAS

 9.1. Size:1531K  1
 ap0803qd.pdf

P0803BDG P0803BDG

 9.2. Size:92K  ape
 ap0803gmt-hf.pdf

P0803BDG P0803BDG

AP0803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

 9.3. Size:95K  ape
 ap0803gmt-a-hf.pdf

P0803BDG P0803BDG

AP0803GMT-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 8.5m Low On-resistance ID 50AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugg

 9.4. Size:97K  ape
 ap0803gmp-hf.pdf

P0803BDG P0803BDG

AP0803GMP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 9.5m RoHS Compliant & Halogen-Free ID 44AGSDescriptionDDAdvanced Power MOSFETs from APEC provide the DDDdesigner with the best combination of fast switching,ruggedized device design,

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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