P0804BD PDF and Equivalents Search

 

P0804BD PDF Specs and Replacement


   Type Designator: P0804BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO252
 

 P0804BD substitution

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P0804BD PDF Specs

 ..1. Size:617K  unikc
p0804bd.pdf pdf_icon

P0804BD

P0804BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 8.5m @VGS = 10V 40V 50A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 50 ID Continuous Drain Current TC = 100 A C 35 IDM 100 Pulsed Drain Current1... See More ⇒

 0.1. Size:478K  unikc
p0804bd8.pdf pdf_icon

P0804BD

P0804BD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 8m @VGS = 10V 62A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 62 ID Continuous Drain Current TC = 100 C 39 A IDM 160 Pulsed Drain Current1 ... See More ⇒

 8.1. Size:391K  unikc
p0804bk.pdf pdf_icon

P0804BD

P0804BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 8m @VGS = 10V 40V 30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C(Package Limited) 30 TC = 25 ID C(Silicon Limited) Continuous Drain Current 68 T... See More ⇒

 8.2. Size:393K  unikc
p0804bvg.pdf pdf_icon

P0804BD

P0804BVG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 12m @VGS = 10V 40V 12A SOP- 08 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 12 ID Continuous Drain Current TC= 100 A C 8 IDM 50 Pulsed Dr... See More ⇒

Detailed specifications: P0770EI , P0770EIS , P0770ETF , P0770ETFS , P0780ATF , P0780ATFS , P0803BDG , P0803BVG , IRFP250N , P0804BD8 , P0804BK , P0804BVG , P0903BEA , P0903BIS , P0903BK , P0903BKA , P0903BKB .

Keywords - P0804BD MOSFET specs

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