P0804BVG Datasheet. Specs and Replacement

Type Designator: P0804BVG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP8

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P0804BVG datasheet

 ..1. Size:393K  unikc
 p0804bvg.pdf pdf_icon

P0804BVG

P0804BVG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 12m @VGS = 10V 40V 12A SOP- 08 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 12 ID Continuous Drain Current TC= 100 A C 8 IDM 50 Pulsed Dr... See More ⇒

 8.1. Size:391K  unikc
 p0804bk.pdf pdf_icon

P0804BVG

P0804BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 8m @VGS = 10V 40V 30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C(Package Limited) 30 TC = 25 ID C(Silicon Limited) Continuous Drain Current 68 T... See More ⇒

 8.2. Size:617K  unikc
 p0804bd.pdf pdf_icon

P0804BVG

P0804BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 8.5m @VGS = 10V 40V 50A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 50 ID Continuous Drain Current TC = 100 A C 35 IDM 100 Pulsed Drain Current1... See More ⇒

 8.3. Size:478K  unikc
 p0804bd8.pdf pdf_icon

P0804BVG

P0804BD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 8m @VGS = 10V 62A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 62 ID Continuous Drain Current TC = 100 C 39 A IDM 160 Pulsed Drain Current1 ... See More ⇒

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Detailed specifications: P0770ETFS, P0780ATF, P0780ATFS, P0803BDG, P0803BVG, P0804BD, P0804BD8, P0804BK, 2N7000, P0903BEA, P0903BIS, P0903BK, P0903BKA, P0903BKB, P0903BT, P0903BTG, P0903BV

Keywords - P0804BVG MOSFET specs

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