P0910AS Datasheet and Replacement
Type Designator: P0910AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 205 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO263
P0910AS substitution
P0910AS Datasheet (PDF)
p0910as.pdf

P0910AS N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.5m @VGS = 10V100V 80A TO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C80IDContinuous Drain CurrentTC = 100 C50AIDM250Pulsed Drain Current1IASAvalanche Current 72
p0910atf.pdf

P0910ATF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 9.5m @VGS = 10V 54ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C54IDContinuous Drain Current1TC = 100 C38AIDM150Pulsed Drain Current2IASAvalanche Current
p0910atg.pdf

P0910ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 9.5m @VGS = 10V 89ATO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C89IDContinuous Drain Current1TC = 100 C63AIDM250Pulsed Drain Current2IASAvalanche Current 11
Datasheet: P0903BKB , P0903BT , P0903BTG , P0903BV , P0903BVA , P0908AD , P0908AT , P0908ATF , IRFB3607 , P0910ATF , P0910ATG , P0920AD , P0920AT , P0920ATF , P0920BD , P0925AD , P0925BTF .
History: DH400P06F | 7NM70G-TF1-T | AP3A010MT | STL4N80K5 | IXFT86N30T | HGB100N12S | 2N4221A
Keywords - P0910AS MOSFET datasheet
P0910AS cross reference
P0910AS equivalent finder
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History: DH400P06F | 7NM70G-TF1-T | AP3A010MT | STL4N80K5 | IXFT86N30T | HGB100N12S | 2N4221A



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