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P0910ATF PDF Specs and Replacement


   Type Designator: P0910ATF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 205 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO220F
 

 P0910ATF substitution

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P0910ATF PDF Specs

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P0910ATF

P0910ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 9.5m @VGS = 10V 54A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 54 ID Continuous Drain Current1 TC = 100 C 38 A IDM 150 Pulsed Drain Current2 IAS Avalanche Current ... See More ⇒

 7.1. Size:360K  unikc
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P0910ATF

P0910ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 9.5m @VGS = 10V 89A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 89 ID Continuous Drain Current1 TC = 100 C 63 A IDM 250 Pulsed Drain Current2 IAS Avalanche Current 11... See More ⇒

 8.1. Size:542K  unikc
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P0910ATF

P0910AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5m @VGS = 10V 100V 80A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 80 ID Continuous Drain Current TC = 100 C 50 A IDM 250 Pulsed Drain Current1 IAS Avalanche Current 72... See More ⇒

Detailed specifications: P0903BT , P0903BTG , P0903BV , P0903BVA , P0908AD , P0908AT , P0908ATF , P0910AS , 13N50 , P0910ATG , P0920AD , P0920AT , P0920ATF , P0920BD , P0925AD , P0925BTF , P092ABD .

Keywords - P0910ATF MOSFET specs

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