P0910ATF Datasheet. Specs and Replacement

Type Designator: P0910ATF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 205 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO220F

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P0910ATF datasheet

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P0910ATF

P0910ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 9.5m @VGS = 10V 54A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 54 ID Continuous Drain Current1 TC = 100 C 38 A IDM 150 Pulsed Drain Current2 IAS Avalanche Current ... See More ⇒

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P0910ATF

P0910ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 9.5m @VGS = 10V 89A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 89 ID Continuous Drain Current1 TC = 100 C 63 A IDM 250 Pulsed Drain Current2 IAS Avalanche Current 11... See More ⇒

 8.1. Size:542K  unikc
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P0910ATF

P0910AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5m @VGS = 10V 100V 80A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 80 ID Continuous Drain Current TC = 100 C 50 A IDM 250 Pulsed Drain Current1 IAS Avalanche Current 72... See More ⇒

Detailed specifications: P0903BT, P0903BTG, P0903BV, P0903BVA, P0908AD, P0908AT, P0908ATF, P0910AS, SPP20N60C3, P0910ATG, P0920AD, P0920AT, P0920ATF, P0920BD, P0925AD, P0925BTF, P092ABD

Keywords - P0910ATF MOSFET specs

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