P0910ATF Datasheet and Replacement
Type Designator: P0910ATF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 54 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 205 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO220F
P0910ATF substitution
P0910ATF Datasheet (PDF)
p0910atf.pdf

P0910ATF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 9.5m @VGS = 10V 54ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C54IDContinuous Drain Current1TC = 100 C38AIDM150Pulsed Drain Current2IASAvalanche Current
p0910atg.pdf

P0910ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 9.5m @VGS = 10V 89ATO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C89IDContinuous Drain Current1TC = 100 C63AIDM250Pulsed Drain Current2IASAvalanche Current 11
p0910as.pdf

P0910AS N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.5m @VGS = 10V100V 80A TO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C80IDContinuous Drain CurrentTC = 100 C50AIDM250Pulsed Drain Current1IASAvalanche Current 72
Datasheet: P0903BT , P0903BTG , P0903BV , P0903BVA , P0908AD , P0908AT , P0908ATF , P0910AS , TK10A60D , P0910ATG , P0920AD , P0920AT , P0920ATF , P0920BD , P0925AD , P0925BTF , P092ABD .
History: CJPF12N65 | 6N60KG-TA3-T | STN4480 | UPA1764G | 2SK1496-Z | NCE65N1K2F | STD5NK50ZT4
Keywords - P0910ATF MOSFET datasheet
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History: CJPF12N65 | 6N60KG-TA3-T | STN4480 | UPA1764G | 2SK1496-Z | NCE65N1K2F | STD5NK50ZT4



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