All MOSFET. P0950ETF Datasheet

 

P0950ETF Datasheet and Replacement


   Type Designator: P0950ETF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.88 Ohm
   Package: TO220F
 

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P0950ETF Datasheet (PDF)

 0.1. Size:539K  unikc
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P0950ETF

P0950ETF / P0950ETFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.88 @VGS = 10V500V 9ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C9IDContinuous Drain Current2TC = 100 C5.7AIDM

Datasheet: P0910ATG , P0920AD , P0920AT , P0920ATF , P0920BD , P0925AD , P0925BTF , P092ABD , IRFP450 , P0950ETFS , P0990AU , P1003BDF , P1003BK , P1003EK , P1003EVG , P1004BD , P1004BS .

History: 2N60G-TF3T-T | UPA1764G | 2SK1445 | STD5NK50ZT4 | DH50N06FZC | SSM3K36FS | 6N60KG-TA3-T

Keywords - P0950ETF MOSFET datasheet

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