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P0950ETF PDF Specs and Replacement


   Type Designator: P0950ETF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.88 Ohm
   Package: TO220F
 

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P0950ETF PDF Specs

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P0950ETF

P0950ETF / P0950ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.88 @VGS = 10V 500V 9A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 TC = 25 C 9 ID Continuous Drain Current2 TC = 100 C 5.7 A IDM... See More ⇒

Detailed specifications: P0910ATG , P0920AD , P0920AT , P0920ATF , P0920BD , P0925AD , P0925BTF , P092ABD , NCEP15T14 , P0950ETFS , P0990AU , P1003BDF , P1003BK , P1003EK , P1003EVG , P1004BD , P1004BS .

Keywords - P0950ETF MOSFET specs

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