P0950ETF Datasheet. Specs and Replacement

Type Designator: P0950ETF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.88 Ohm

Package: TO220F

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P0950ETF datasheet

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P0950ETF

P0950ETF / P0950ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 0.88 @VGS = 10V 500V 9A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 30 TC = 25 C 9 ID Continuous Drain Current2 TC = 100 C 5.7 A IDM... See More ⇒

Detailed specifications: P0910ATG, P0920AD, P0920AT, P0920ATF, P0920BD, P0925AD, P0925BTF, P092ABD, CS150N03A8, P0950ETFS, P0990AU, P1003BDF, P1003BK, P1003EK, P1003EVG, P1004BD, P1004BS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.