All MOSFET. P0950ETFS Datasheet

 

P0950ETFS Datasheet and Replacement


   Type Designator: P0950ETFS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.88 Ohm
   Package: TO220FS
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P0950ETFS Datasheet (PDF)

 6.1. Size:539K  unikc
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P0950ETFS

P0950ETF / P0950ETFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.88 @VGS = 10V500V 9ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C9IDContinuous Drain Current2TC = 100 C5.7AIDM

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: LSF65R570GT | CSD16342Q5A

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