All MOSFET. P0950ETFS Datasheet

 

P0950ETFS Datasheet and Replacement


   Type Designator: P0950ETFS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.88 Ohm
   Package: TO220FS
 

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P0950ETFS Datasheet (PDF)

 6.1. Size:539K  unikc
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P0950ETFS

P0950ETF / P0950ETFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.88 @VGS = 10V500V 9ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C9IDContinuous Drain Current2TC = 100 C5.7AIDM

Datasheet: P0920AD , P0920AT , P0920ATF , P0920BD , P0925AD , P0925BTF , P092ABD , P0950ETF , IRFP250 , P0990AU , P1003BDF , P1003BK , P1003EK , P1003EVG , P1004BD , P1004BS , P1004HV .

History: FDU3706 | CS9N90F | IXTR40P50P | CTD03N4P6 | MMBFJ108 | BSG0813NDI | HSSC3134

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