P1103BVG Datasheet. Specs and Replacement

Type Designator: P1103BVG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SOP8

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P1103BVG datasheet

 ..1. Size:312K  unikc
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P1103BVG

P1103BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 11m @VGS = 10V 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 11 ID Continuous Drain Current TA = 70 C 10 A IDM 100 Pulsed Drain Current... See More ⇒

 8.1. Size:477K  unikc
 p1103bea.pdf pdf_icon

P1103BVG

P1103BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 11m @VGS = 10V 30V 37A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 37 TC = 100 C 23 ID Continuous Drain Current1,2 TA = 25 C 12 A T... See More ⇒

 9.1. Size:266K  sanyo
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P1103BVG

PCP1103 Ordering number ENA1346 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor PCP1103 DC / DC Converter Applications Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switch... See More ⇒

 9.2. Size:320K  onsemi
 pcp1103.pdf pdf_icon

P1103BVG

Ordering number ENA1346A PCP1103 Bipolar Transistor http //onsemi.com ( ) 30V, 1.5A, Low VCE sat PNP Single PCP Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High speed switching High allowable powe... See More ⇒

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Detailed specifications: P1060ETF, P1060ETFS, P1065AT, P1065ATF, P106AAT, P1070ATF, P1070ATFS, P1103BEA, IRFZ46N, P117AATX, P1203BD, P1203BEA, P1203BKA, P1203BV, P1203ED, P1203EEA, P1203EK

Keywords - P1103BVG MOSFET specs

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