P1103BVG Datasheet and Replacement. Cross Reference Search

P1103BVG Datasheet (PDF)

..1. Size:312K unikc
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P1103BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 11m @VGS = 10V 11ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTA = 25 C11IDContinuous Drain CurrentTA = 70 C10AIDM100Pulsed Drain Current

8.1. Size:477K unikc
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P1103BEAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID11m @VGS = 10V30V 37APDFN 3x3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20 TC = 25 C37 TC = 100 C23IDContinuous Drain Current1,2 TA = 25 C12A T

9.1. Size:266K sanyo
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PCP1103Ordering number : ENA1346SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorPCP1103DC / DC Converter ApplicationsApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switch

9.2. Size:320K onsemi
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Ordering number : ENA1346APCP1103Bipolar Transistorhttp://onsemi.com ( )30V, 1.5A, Low VCE sat PNP Single PCPApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate driversFeatures Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High speed switching High allowable powe

Datasheet: P1060ETF , P1060ETFS , P1065AT , P1065ATF , P106AAT , P1070ATF , P1070ATFS , P1103BEA , IRF730 , P117AATX , P1203BD , P1203BEA , P1203BKA , P1203BV , P1203ED , P1203EEA , P1203EK .