All MOSFET. P1504EDG Datasheet

 

P1504EDG MOSFET. Datasheet pdf. Equivalent


   Type Designator: P1504EDG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252

 P1504EDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1504EDG Datasheet (PDF)

 ..1. Size:647K  unikc
 p1504edg.pdf

P1504EDG P1504EDG

P1504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = -10V-45A-40V100% Rg tested100% UIS testedTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40 VVGSGate-Source Voltage 20 VTA= 25 C-45IDContinuous Drain CurrentTA= 70 C

 8.1. Size:468K  unikc
 p1504eis.pdf

P1504EDG P1504EDG

P1504EISP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = -10V-40V -38A100% Rg tested100% UIS testedTO-251(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-38IDContinuous Drain CurrentTC = 100

 9.1. Size:534K  unikc
 p1504hv.pdf

P1504EDG P1504EDG

P1504HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID23m @VGS = 10V40V 7A100% UIS testedSOP-8 100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 25TA = 25 C7IDContinuous Drain CurrentTA= 100 C4A

 9.2. Size:477K  unikc
 p1504bvg.pdf

P1504EDG P1504EDG

P1504BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V40V 9ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C9IDContinuous Drain CurrentTA = 70 C7.5AIDM35Pulsed Drain Current1IASAvalanche Current 32EAS

 9.3. Size:764K  unikc
 p1504bdg.pdf

P1504EDG P1504EDG

P1504BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V40V 40ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C40IDContinuous Drain CurrentTC = 100 C25AIDM85Pulsed Drain Current1

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FDG315N

 

 
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