P1510ATG Specs and Replacement
Type Designator: P1510ATG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 64 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO220
P1510ATG substitution
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P1510ATG datasheet
p1510atg.pdf
P1510ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = 10V 100V 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC= 25 C 64 ID Continuous Drain Current TC= 100 C 45 A IDM 200 Pulsed Drain Current... See More ⇒
Detailed specifications: P1503BVG , P1503HK , P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , IRLZ44N , P1520ED , P1603BD , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED .
Keywords - P1510ATG MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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