All MOSFET. P1510ATG Datasheet

 

P1510ATG Datasheet and Replacement


   Type Designator: P1510ATG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220
 

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P1510ATG Datasheet (PDF)

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P1510ATG

P1510ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V100V 64ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC= 25 C64IDContinuous Drain CurrentTC= 100 C45AIDM200Pulsed Drain Current

Datasheet: P1503BVG , P1503HK , P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , IRFB4110 , P1520ED , P1603BD , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED .

History: FQI8N60C

Keywords - P1510ATG MOSFET datasheet

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