All MOSFET. P1510ATG Datasheet


P1510ATG MOSFET. Datasheet pdf. Equivalent

Type Designator: P1510ATG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 64 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 131 nC

Rise Time (tr): 110 nS

Drain-Source Capacitance (Cd): 420 pF

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: TO220

P1510ATG Transistor Equivalent Substitute - MOSFET Cross-Reference Search


P1510ATG Datasheet (PDF)

 ..1. Size:458K  unikc


P1510ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V100V 64ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC= 25 C64IDContinuous Drain CurrentTC= 100 C45AIDM200Pulsed Drain Current

Datasheet: P1503BVG , P1503HK , P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , IRF640N , P1520ED , P1603BD , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED .


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