P1510ATG MOSFET. Datasheet pdf. Equivalent
Type Designator: P1510ATG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 64 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 131 nC
Rise Time (tr): 110 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO220
P1510ATG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P1510ATG Datasheet (PDF)
..1. p1510atg.pdf 
Size:458K _unikc
P1510ATGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V100V 64ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC= 25 C64IDContinuous Drain CurrentTC= 100 C45AIDM200Pulsed Drain Current
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