All MOSFET. P1603BEB Datasheet

 

P1603BEB MOSFET. Datasheet pdf. Equivalent

Type Designator: P1603BEB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 29 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: PDFN2X2S

P1603BEB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1603BEB Datasheet (PDF)

 ..1. Size:221K  unikc
 p1603beb.pdf

P1603BEB P1603BEB

P1603BEBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 21APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C21TC = 100 C17IDContinuous Drain Current3TA = 25 C8ATA= 70

 0.1. Size:456K  unikc
 p1603beba.pdf

P1603BEB P1603BEB

P1603BEBAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 24APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24TC = 100 C15IDContinuous Drain Current3TA = 25 C8.8ATA=

 0.2. Size:681K  unikc
 p1603bebb.pdf

P1603BEB P1603BEB

P1603BEBBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 24APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24TC = 100 C15IDContinuous Drain Current3TA = 25 C8.2ATA=

 8.1. Size:336K  unikc
 p1603bv.pdf

P1603BEB P1603BEB

P1603BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 16m @VGS = 10V 10ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C10IDContinuous Drain CurrentTA = 70 C8AIDM55Pulsed Drain Current1IASAvalanche Current 23EAS

 8.2. Size:534K  unikc
 p1603bd.pdf

P1603BEB P1603BEB

P1603BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 10V30V 40ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C40IDContinuous Drain CurrentTC= 100 C32AIDM150Pulsed Drain Current1

 8.3. Size:473K  unikc
 p1603bva.pdf

P1603BEB P1603BEB

P1603BVAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = 10V30V 9.4ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C9.4IDContinuous Drain CurrentTA = 70 C7.5AIDM50Pulsed Drain Current

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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