All MOSFET. P1604ED Datasheet

 

P1604ED MOSFET. Datasheet pdf. Equivalent

Type Designator: P1604ED

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 43 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 42 nC

Rise Time (tr): 43 nS

Drain-Source Capacitance (Cd): 480 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO252

P1604ED Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1604ED Datasheet (PDF)

 ..1. Size:592K  unikc
 p1604ed.pdf

P1604ED P1604ED

P1604EDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-40V 16m @VGS = -10V -43ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-43IDContinuous Drain CurrentTC = 100 C-34AIDM-130Pulsed Drain Cu

 8.1. Size:487K  unikc
 p1604et.pdf

P1604ED P1604ED

P1604ETP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = -10V -40V -65ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-65IDContinuous Drain Current2TC = 100 C-42AIDM-120Pulsed Drain

 8.2. Size:379K  unikc
 p1604etf.pdf

P1604ED P1604ED

P1604ETFP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -40V 16m @VGS = -10V -40ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-40IDContinuous Drain CurrentTC = 100 C-25AIDM-120Pulsed Drai

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF1405 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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