All MOSFET. P1703BDG Datasheet

 

P1703BDG Datasheet and Replacement


   Type Designator: P1703BDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.8 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO252
 

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P1703BDG Datasheet (PDF)

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P1703BDG

P1703BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = 10V25V 42ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C42IDContinuous Drain Current2TC= 100 C26AIDM168Pulsed Drain Current1IASAvalanche Current 27EA

Datasheet: P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF , P1606BD , P1610AD , P1610AT , AON7408 , P2610ADG , P2610AI , P2610ATFG , P2610ATG , P2610BD , P2610BS , P2610BT , P2615ATFG .

History: RFL2N05L | AUIRLB3036 | ME2306A | ME25N06-G | AMD510C | GSM3410 | 2SK2138

Keywords - P1703BDG MOSFET datasheet

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