P1703BDG Specs and Replacement
Type Designator: P1703BDG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21.8 nS
Cossⓘ - Output Capacitance: 208 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO252
P1703BDG substitution
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P1703BDG datasheet
p1703bdg.pdf
P1703BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 16m @VGS = 10V 25V 42A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 42 ID Continuous Drain Current2 TC= 100 C 26 A IDM 168 Pulsed Drain Current1 IAS Avalanche Current 27 EA... See More ⇒
Detailed specifications: P1603BV, P1603BVA, P1604ED, P1604ET, P1604ETF, P1606BD, P1610AD, P1610AT, IRFP250N, P2610ADG, P2610AI, P2610ATFG, P2610ATG, P2610BD, P2610BS, P2610BT, P2615ATFG
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