All MOSFET. IRCZ245 Datasheet

 

IRCZ245 Datasheet and Replacement


   Type Designator: IRCZ245
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220
 

 IRCZ245 substitution

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IRCZ245 Datasheet (PDF)

 8.1. Size:141K  international rectifier
 ircz24 ircz24pbf.pdf pdf_icon

IRCZ245

PD - 9.615AIRCZ24HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 55V Current Sense 175C Operating TemperatureRDS(on) = 0.040 Fast Switching Ease of ParallelingID = 26A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and

 8.2. Size:145K  international rectifier
 ircz24.pdf pdf_icon

IRCZ245

PD - 9.615AIRCZ24HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 55V Current Sense 175C Operating TemperatureRDS(on) = 0.040 Fast Switching Ease of ParallelingID = 26A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and

Datasheet: IRCP244 , IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , K4145 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N .

Keywords - IRCZ245 MOSFET datasheet

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