All MOSFET. IRCZ245 Datasheet

 

IRCZ245 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRCZ245

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO220

IRCZ245 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRCZ245 Datasheet (PDF)

8.1. ircz24 ircz24pbf.pdf Size:141K _international_rectifier

IRCZ245 IRCZ245

PD - 9.615A IRCZ24 HEXFET® Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and

8.2. ircz24.pdf Size:145K _international_rectifier

IRCZ245 IRCZ245

PD - 9.615A IRCZ24 HEXFET® Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175°C Operating Temperature RDS(on) = 0.040Ω Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and

 

Datasheet: IRCP244 , IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRFZ48N , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N .

 

 
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