IRCZ245 PDF and Equivalents Search

 

IRCZ245 Specs and Replacement


   Type Designator: IRCZ245
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220
 

 IRCZ245 substitution

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IRCZ245 datasheet

 8.1. Size:141K  international rectifier
 ircz24 ircz24pbf.pdf pdf_icon

IRCZ245

PD - 9.615A IRCZ24 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175 C Operating Temperature RDS(on) = 0.040 Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒

 8.2. Size:145K  international rectifier
 ircz24.pdf pdf_icon

IRCZ245

PD - 9.615A IRCZ24 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175 C Operating Temperature RDS(on) = 0.040 Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒

Detailed specifications: IRCP244 , IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRF9540N , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N .

Keywords - IRCZ245 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
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