IRCZ245 PDF and Equivalents Search

 

IRCZ245 Specs and Replacement

Type Designator: IRCZ245

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

IRCZ245 substitution

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IRCZ245 datasheet

 8.1. Size:141K  international rectifier
 ircz24 ircz24pbf.pdf pdf_icon

IRCZ245

PD - 9.615A IRCZ24 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175 C Operating Temperature RDS(on) = 0.040 Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒

 8.2. Size:145K  international rectifier
 ircz24.pdf pdf_icon

IRCZ245

PD - 9.615A IRCZ24 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175 C Operating Temperature RDS(on) = 0.040 Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒

Detailed specifications: IRCP244 , IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRF9540N , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N .

History: AUIRFR4615

Keywords - IRCZ245 MOSFET specs

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