IRCZ245 Datasheet and Replacement
Type Designator: IRCZ245
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO220
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IRCZ245 Datasheet (PDF)
ircz24 ircz24pbf.pdf
PD - 9.615AIRCZ24HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 55V Current Sense 175C Operating TemperatureRDS(on) = 0.040 Fast Switching Ease of ParallelingID = 26A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and
ircz24.pdf
PD - 9.615AIRCZ24HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 55V Current Sense 175C Operating TemperatureRDS(on) = 0.040 Fast Switching Ease of ParallelingID = 26A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and
Datasheet: IRCP244 , IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRF4905 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N .
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