All MOSFET. IRCZ245 Datasheet

 

IRCZ245 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRCZ245
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 60 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 10 V
   Maximum Drain Current |Id|: 17 A
   Maximum Junction Temperature (Tj): 150 °C
   Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
   Package: TO220

 IRCZ245 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRCZ245 Datasheet (PDF)

 8.1. Size:141K  international rectifier
ircz24 ircz24pbf.pdf

IRCZ245
IRCZ245

PD - 9.615AIRCZ24HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 55V Current Sense 175C Operating TemperatureRDS(on) = 0.040 Fast Switching Ease of ParallelingID = 26A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and

 8.2. Size:145K  international rectifier
ircz24.pdf

IRCZ245
IRCZ245

PD - 9.615AIRCZ24HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 55V Current Sense 175C Operating TemperatureRDS(on) = 0.040 Fast Switching Ease of ParallelingID = 26A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and

Datasheet: IRCP244 , IRCP250 , IRCP254 , IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , 12N60 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N .

 

 
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