P261AFEA Specs and Replacement

Type Designator: P261AFEA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 599 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PDFN3X3P

P261AFEA substitution

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P261AFEA datasheet

 ..1. Size:481K  unikc
 p261afea.pdf pdf_icon

P261AFEA

P261AFEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -4.5V -12V -32A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -12 V VGS Gate-Source Voltage 8 TC = 25 C -32 TC = 100 C -20 ID Continuous Drain Current2 TA = 25... See More ⇒

 9.1. Size:458K  unikc
 p261alv.pdf pdf_icon

P261AFEA

P261ALV Dual P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 19m @VGS = -4.5V -12V -8.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -12 V VGS Gate-Source Voltage 8 V TA= 25 C -8.5 ID Continuous Drain Current TA= 70 C -6.8 A IDM -34 Pulsed Dra... See More ⇒

Detailed specifications: P2610AI, P2610ATFG, P2610ATG, P2610BD, P2610BS, P2610BT, P2615ATFG, P2615ATG, AO3401, P261ALV, P1810ATX, P1820AD, P1820BD, P1825AD, P1825AT, P2003BDG, P3504BD

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.