All MOSFET. P1810ATX Datasheet

 

P1810ATX Datasheet and Replacement


   Type Designator: P1810ATX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 617 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220
 

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P1810ATX Datasheet (PDF)

 ..1. Size:335K  unikc
 p1810atx.pdf pdf_icon

P1810ATX

P1810ATXN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 18m @VGS = 10V 63ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C63IDContinuous Drain Current2TC = 100 C40AIDM180Pulsed Drain Current1IASAvalanche Current 87

 9.1. Size:551K  alfa-mos
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P1810ATX

AFP1810 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1810, P-Channel enhancement mode -100/-2.0A,RDS(ON)= 230m@VGS= -10V MOSFET, uses Advanced Trench Technology -100/-1.0A,RDS(ON)= 245m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

Datasheet: P2610ATG , P2610BD , P2610BS , P2610BT , P2615ATFG , P2615ATG , P261AFEA , P261ALV , 8205A , P1820AD , P1820BD , P1825AD , P1825AT , P2003BDG , P3504BD , P3506DD , P3506DT .

History: AP4543GEH-HF | NCE60N1K0I | AOE6932 | TSM75N75CZ | PDN2309S

Keywords - P1810ATX MOSFET datasheet

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