P1810ATX Specs and Replacement

Type Designator: P1810ATX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 617 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO220

P1810ATX substitution

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P1810ATX datasheet

 ..1. Size:335K  unikc
 p1810atx.pdf pdf_icon

P1810ATX

P1810ATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 18m @VGS = 10V 63A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 63 ID Continuous Drain Current2 TC = 100 C 40 A IDM 180 Pulsed Drain Current1 IAS Avalanche Current 87 ... See More ⇒

 9.1. Size:551K  alfa-mos
 afp1810.pdf pdf_icon

P1810ATX

AFP1810 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1810, P-Channel enhancement mode -100/-2.0A,RDS(ON)= 230m @VGS= -10V MOSFET, uses Advanced Trench Technology -100/-1.0A,RDS(ON)= 245m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl... See More ⇒

Detailed specifications: P2610ATG, P2610BD, P2610BS, P2610BT, P2615ATFG, P2615ATG, P261AFEA, P261ALV, IRFP260, P1820AD, P1820BD, P1825AD, P1825AT, P2003BDG, P3504BD, P3506DD, P3506DT

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