All MOSFET. P1820BD Datasheet

 

P1820BD Datasheet and Replacement


   Type Designator: P1820BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 169 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO252
 

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P1820BD Datasheet (PDF)

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P1820BD

P1820BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID160m @VGS = 10V200V 18ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 200 VVGSGate-Source Voltage 30 VTC= 25 C18IDContinuous Drain CurrentTC= 100 C11.4AIDM30Pulsed Drain Curre

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P1820BD

P1820ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID160m @VGS = 10V200V 18ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 200VVGSGate-Source Voltage 30TC = 25 C18IDContinuous Drain CurrentTC = 100 C11AIDM29Pulsed Drain Curren

Datasheet: P2610BS , P2610BT , P2615ATFG , P2615ATG , P261AFEA , P261ALV , P1810ATX , P1820AD , IRF9540N , P1825AD , P1825AT , P2003BDG , P3504BD , P3506DD , P3506DT , P3506DTF , P3606BD .

History: AP65SL600AI | BL10N80-W | SL3406 | MGSF1N02ELT1 | CSFR2N60D | AO4314 | HFP8N60S

Keywords - P1820BD MOSFET datasheet

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