All MOSFET. P3504BD Datasheet

 

P3504BD Datasheet and Replacement


   Type Designator: P3504BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO252
 

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P3504BD Datasheet (PDF)

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P3504BD

P3504BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID40m @VGS = 10V40V 20ATO-252100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 100% UIS testedC Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40 VVGSGate-Source Voltage 20 VTC = 25 C20IDContinuous Drain CurrentTC = 70 C16A

Datasheet: P261AFEA , P261ALV , P1810ATX , P1820AD , P1820BD , P1825AD , P1825AT , P2003BDG , 5N60 , P3506DD , P3506DT , P3506DTF , P3606BD , P3606HK , P4404EDG , P4404EI , P4404ETG .

History: IXTA2N80 | P1825AD | SSM6J214FE | SSM6J21TU | IXTH11N80 | UF840KL-TN3-R | DCCF040M65G2

Keywords - P3504BD MOSFET datasheet

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