P3504BD Specs and Replacement
Type Designator: P3504BD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 124 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO252
P3504BD substitution
- MOSFET ⓘ Cross-Reference Search
P3504BD datasheet
p3504bd.pdf
P3504BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40m @VGS = 10V 40V 20A TO-252 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 100% UIS tested C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 V TC = 25 C 20 ID Continuous Drain Current TC = 70 C 16 A ... See More ⇒
Detailed specifications: P261AFEA, P261ALV, P1810ATX, P1820AD, P1820BD, P1825AD, P1825AT, P2003BDG, AON7410, P3506DD, P3506DT, P3506DTF, P3606BD, P3606HK, P4404EDG, P4404EI, P4404ETG
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
