All MOSFET. IRF044 Datasheet

 

IRF044 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF044

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 88(max) nC

Rise Time (tr): 130(max) nS

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: TO3

IRF044 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF044 Datasheet (PDF)

..1. irf044.pdf Size:144K _international_rectifier

IRF044
IRF044

PD - 90584REPETITIVE AVALANCHE AND dv/dt RATED IRF04460V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF044 60V 0.028 44The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

0.1. irf044smd.pdf Size:21K _semelab

IRF044
IRF044

IRF044SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 60V ID(cont) 34A RDS(on) 0.040FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPL

Datasheet: IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , AO3407 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 .

 

 
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