IRF044 Datasheet. Specs and Replacement
Type Designator: IRF044 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 max nS
Cossⓘ - Output Capacitance: 1100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO3
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IRF044 substitution
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IRF044 datasheet
irf044.pdf
PD - 90584 REPETITIVE AVALANCHE AND dv/dt RATED IRF044 60V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF044 60V 0.028 44 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design ... See More ⇒
irf044smd.pdf
IRF044SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 60V ID(cont) 34A RDS(on) 0.040 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPL... See More ⇒
Detailed specifications: IRCP340, IRCP350, IRCP440, IRCP450, IRCZ14, IRCZ245, IRCZ345, IRCZ445, AO3401, IRF054, IRF1010E, IRF1010EL, IRF1010ES, IRF1010N, IRF1010NL, IRF1010NS, IRF1104
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
