IRF044 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF044
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 44 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 88(max) nC
Rise Time (tr): 130(max) nS
Drain-Source Capacitance (Cd): 1100 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
Package: TO3
IRF044 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF044 Datasheet (PDF)
..1. irf044.pdf 
Size:144K _international_rectifier
PD - 90584REPETITIVE AVALANCHE AND dv/dt RATED IRF04460V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF044 60V 0.028 44The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design
0.1. irf044smd.pdf Size:21K _semelab
IRF044SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 60V ID(cont) 34A RDS(on) 0.040FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPL
Datasheet: IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , 7N65 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 .
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