All MOSFET. IRF044 Datasheet

 

IRF044 Datasheet and Replacement


   Type Designator: IRF044
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 130(max) nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO3
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IRF044 Datasheet (PDF)

 ..1. Size:144K  international rectifier
 irf044.pdf pdf_icon

IRF044

PD - 90584REPETITIVE AVALANCHE AND dv/dt RATED IRF04460V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF044 60V 0.028 44The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

 0.1. Size:21K  semelab
 irf044smd.pdf pdf_icon

IRF044

IRF044SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 60V ID(cont) 34A RDS(on) 0.040FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPL

Datasheet: IRCP340 , IRCP350 , IRCP440 , IRCP450 , IRCZ14 , IRCZ245 , IRCZ345 , IRCZ445 , TK10A60D , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 .

History: IRF1310N | IRLB8721 | STW18N60M2

Keywords - IRF044 MOSFET datasheet

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