P2204ND5G Datasheet and Replacement
Type Designator: P2204ND5G
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10.8 nS
Cossⓘ - Output Capacitance: 253 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO252
P2204ND5G substitution
P2204ND5G Datasheet (PDF)
p2204nd5g.pdf
P2204ND5GN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel22m @VGS =10V40V 24A N33m @VGS = -10V-40V -19A PTO-252-5ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP 20N 24TC = 25 CP -19ID
p2204nd5g.pdf
P2204ND5Gwww.VBsemi.twN- and P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETN-CHANNEL P-CHANNELd 100 % Rg and UIS TestedVDS (V) 40 - 40RDS(on) () at VGS = 10 V 0.014 0.014RDS(on) () at VGS = 4.5 V 0.016 0.016APPLICATIONSID (A) 50 - 50 CCFL InverterConfiguration N- and P-PairTO-252-4L D-PAK D1/D2 D1/D2 Top V
Datasheet: P2004EV , P2060ZTF , P2060ZTFS , P2103HVG , P2103NVG , P2202CM , P2202CM6 , P2202CV , IRFB7545 , P2206BD , P2402OV , P2502IZG , P8008BD , P8008BDA , P8008BV , P8008BVA , P8008HV .
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