P8315ATF Datasheet. Specs and Replacement
Type Designator: P8315ATF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 208 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm
Package: TO220F
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P8315ATF datasheet
p8315atf.pdf
P8315ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 83m @VGS = 10V 150V 13.5A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 30 Tc = 25 C 13.5 ID Continuous Drain Current Tc = 100 C 8.5 A IDM 50 Pulsed Drain ... See More ⇒
p8315ad.pdf
P8315AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 83m @VGS = 10V 150V 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 30 V TC = 25 C 20 ID Continuous Drain Current TC = 100 C 12 A IDM 50 Pulsed Drain Curren... See More ⇒
p8315bd.pdf
P8315BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 83m @VGS = 10V 150V 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 30 V TC = 25 C 20 ID Continuous Drain Current TC = 100 C 12 A IDM 50 Pulsed Drain Curren... See More ⇒
Detailed specifications: P8008BV, P8008BVA, P8008HV, P8008HVA, P8010BD, P8010BIS, P8010BV, P8315AD, IRF740, P8315BD, P8503BMA, P8503BMG, P3003EDG, P3004BD, P3004ND5G, P3010BV, P3055LDG
Keywords - P8315ATF MOSFET specs
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