All MOSFET. P3004ND5G Datasheet

 

P3004ND5G Datasheet and Replacement


   Type Designator: P3004ND5G
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252-5
 

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P3004ND5G Datasheet (PDF)

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P3004ND5G

P3004ND5GN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel30m @VGS = 10V40V 12A N55m @VGS = -10V-40V -8.8A PTO-252- 5100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP

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P3004ND5G

P3004BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30m @VGS = 10V40V 29ATO-252100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C29IDContinuous Drain CurrentTC = 70 C23AIDM80Pulsed Drain Current1

Datasheet: P8010BV , P8315AD , P8315ATF , P8315BD , P8503BMA , P8503BMG , P3003EDG , P3004BD , IRF640 , P3010BV , P3055LDG , P3055LLG , P3202CMA , P3202CMG , P3203CMG , P3203EVG , P3204HV .

History: IXTT30N60P | SWP035R10E6S | NCEAP60ND30AG | IRFH4234 | SUM09N20-270 | SWP056R68E7T | SI2347DS

Keywords - P3004ND5G MOSFET datasheet

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