All MOSFET. P3503EVG Datasheet

 

P3503EVG Datasheet and Replacement


   Type Designator: P3503EVG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP8
 

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P3503EVG Datasheet (PDF)

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P3503EVG

P3503EVGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID35m @VGS = -10V -30V -8ASOP- 08ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TC = 25 C-8IDContinuous Drain CurrentTC = 70 AC-7IDM-30Pulsed Drain Curr

Datasheet: P3055LLG , P3202CMA , P3202CMG , P3203CMG , P3203EVG , P3204HV , P3304EV , P3304QV , 7N65 , P3710AV , P3710BD , P3710BV , PZ0703ED , PZ0703EK , PZ0703EV , PZ1003EK , PZ1203EV .

History: P3710AV | STS5DP3LLH6

Keywords - P3503EVG MOSFET datasheet

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