P3503EVG Datasheet. Specs and Replacement
Type Designator: P3503EVG 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 370 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOP8
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P3503EVG datasheet
p3503evg.pdf
P3503EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 35m @VGS = -10V -30V -8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TC = 25 C -8 ID Continuous Drain Current TC = 70 A C -7 IDM -30 Pulsed Drain Curr... See More ⇒
Detailed specifications: P3055LLG, P3202CMA, P3202CMG, P3203CMG, P3203EVG, P3204HV, P3304EV, P3304QV, 10N60, P3710AV, P3710BD, P3710BV, PZ0703ED, PZ0703EK, PZ0703EV, PZ1003EK, PZ1203EV
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: DHI100N03B13 | P3710BD | DHFZ24B31
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