IRF1010NL Datasheet. Specs and Replacement

Type Designator: IRF1010NL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO262

  📄📄 Copy 

IRF1010NL substitution

- MOSFET ⓘ Cross-Reference Search

 

IRF1010NL datasheet

 ..1. Size:292K  international rectifier
irf1010nspbf irf1010nlpbf.pdf pdf_icon

IRF1010NL

PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11m l Lead-Free G Description ID = 85A Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t... See More ⇒

 ..2. Size:292K  international rectifier
irf1010nlpbf irf1010nspbf.pdf pdf_icon

IRF1010NL

PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11m l Lead-Free G Description ID = 85A Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t... See More ⇒

 6.1. Size:146K  international rectifier
irf1010ns.pdf pdf_icon

IRF1010NL

PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 11m Fully Avalanche Rated G Description Advanced HEXFET Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low ... See More ⇒

 6.2. Size:211K  international rectifier
irf1010n.pdf pdf_icon

IRF1010NL

PD - 91278 IRF1010N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 11m G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan... See More ⇒

Detailed specifications: IRCZ345, IRCZ445, IRF044, IRF054, IRF1010E, IRF1010EL, IRF1010ES, IRF1010N, K4145, IRF1010NS, IRF1104, IRF130, IRF1310N, IRF1310NL, IRF1310NS, IRF140, IRF1404

Keywords - IRF1010NL MOSFET specs

 IRF1010NL cross reference

 IRF1010NL equivalent finder

 IRF1010NL pdf lookup

 IRF1010NL substitution

 IRF1010NL replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility