Справочник MOSFET. IRF1010NL

 

IRF1010NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF1010NL

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 180 W

Предельно допустимое напряжение сток-исток |Uds|: 55 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 4 V

Максимально допустимый постоянный ток стока |Id|: 85 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 120(max) nC

Время нарастания (tr): 76 ns

Выходная емкость (Cd): 690 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.011 Ohm

Тип корпуса: TO262

Аналог (замена) для IRF1010NL

 

 

IRF1010NL Datasheet (PDF)

..1. irf1010nlpbf irf1010nspbf.pdf Size:292K _international_rectifier

IRF1010NL
IRF1010NL

PD - 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

..2. irf1010nspbf irf1010nlpbf.pdf Size:292K _infineon

IRF1010NL
IRF1010NL

PD - 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

6.1. irf1010npbf.pdf Size:225K _international_rectifier

IRF1010NL
IRF1010NL

PD - 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

6.2. irf1010ns.pdf Size:146K _international_rectifier

IRF1010NL
IRF1010NL

PD - 94171IRF1010NSIRF1010NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Fully Avalanche RatedGDescriptionAdvanced HEXFET Power MOSFETs fromID = 85A International Rectifier utilize advanced processingStechniques to achieve extremely low

 6.3. irf1010n.pdf Size:211K _international_rectifier

IRF1010NL
IRF1010NL

PD - 91278IRF1010NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 11mG Fast Switching Fully Avalanche RatedID = 85A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

6.4. irf1010npbf.pdf Size:225K _infineon

IRF1010NL
IRF1010NL

PD - 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

 6.5. irf1010ns.pdf Size:252K _inchange_semiconductor

IRF1010NL
IRF1010NL

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

6.6. irf1010n.pdf Size:246K _inchange_semiconductor

IRF1010NL
IRF1010NL

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010N IIRF1010NFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Другие MOSFET... IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , CEP50N06 , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 .

 

 
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