All MOSFET. PZ2003EV Datasheet

 

PZ2003EV MOSFET. Datasheet pdf. Equivalent

Type Designator: PZ2003EV

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 293 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: SOP8

PZ2003EV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZ2003EV Datasheet (PDF)

1.1. pz2003ev.pdf Size:613K _unikc

PZ2003EV
PZ2003EV

PZ2003EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -8A SOP- 8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 TA = 25 ° C -8 ID Continuous Drain Current TA = 70 ° C -6.5 A IDM -50 Pul

3.1. pz2003eea.pdf Size:490K _unikc

PZ2003EV
PZ2003EV

PZ2003EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20mΩ @VGS = -10V -30V -28A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±25 TC = 25 ° C -28 TC = 100 ° C -17 ID Continuous Drain Current TA = 25

Datasheet: P3710BD , P3710BV , PZ0703ED , PZ0703EK , PZ0703EV , PZ1003EK , PZ1203EV , PZ2003EEA , IRF2807 , PZ2103NV , PZ2503HV , PZ2806HV , PZ2N7002M , PZ3304QV , PZ509BA , PZ513BA , PZ5203EMA .

 


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