PZ2003EV Datasheet. Specs and Replacement

Type Designator: PZ2003EV  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 293 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

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PZ2003EV datasheet

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PZ2003EV

PZ2003EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -8A SOP- 8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -8 ID Continuous Drain Current TA = 70 C -6.5 A IDM -50 Pul... See More ⇒

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PZ2003EV

PZ2003EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -28A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -28 TC = 100 C -17 ID Continuous Drain Current TA = 25... See More ⇒

Detailed specifications: P3710BD, P3710BV, PZ0703ED, PZ0703EK, PZ0703EV, PZ1003EK, PZ1203EV, PZ2003EEA, 2N7000, PZ2103NV, PZ2503HV, PZ2806HV, PZ2N7002M, PZ3304QV, PZ509BA, PZ513BA, PZ5203EMA

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