PE6B0SA Datasheet. Specs and Replacement

Type Designator: PE6B0SA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 235 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: PDFN3X3P

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PE6B0SA substitution

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PE6B0SA datasheet

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PE6B0SA

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PE6B0SA

PE6B0SA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 5m 42A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switching Losses. Products... See More ⇒

Detailed specifications: PZ2806HV, PZ2N7002M, PZ3304QV, PZ509BA, PZ513BA, PZ5203EMA, PZ5203QV, PZ558EZ, SPP20N60C3, PF610BC, PF610BL, PF610HV, PI506BZ, PI632BZ, PJ614DA, PC015BD, PC015HV

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.