All MOSFET. PE6B0SA Datasheet

 

PE6B0SA Datasheet and Replacement


   Type Designator: PE6B0SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN3X3P
 

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PE6B0SA Datasheet (PDF)

 ..1. Size:556K  unikc
 pe6b0sa.pdf pdf_icon

PE6B0SA

PE6B0SAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6m @VGS = 10V30V 38APDFN 3X3PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C38TC = 100 C24IDContinuous Drain Current3TA = 25 C15ATA= 70

 ..2. Size:452K  niko-sem
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PE6B0SA

PE6B0SA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 5m 42A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switching Losses. Products

Datasheet: PZ2806HV , PZ2N7002M , PZ3304QV , PZ509BA , PZ513BA , PZ5203EMA , PZ5203QV , PZ558EZ , AON7410 , PF610BC , PF610BL , PF610HV , PI506BZ , PI632BZ , PJ614DA , PC015BD , PC015HV .

History: OSG70R1K4FF | IXTA4N150HV | SLD60R380S2

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