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P2B60AMA Specs and Replacement


   Type Designator: P2B60AMA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.04 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 8.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: SOT23
 

 P2B60AMA substitution

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P2B60AMA datasheet

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P2B60AMA

P2B60AMA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200 @VGS = 10V 600V 40mA SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 30 V TA = 25 C 40 ID Continuous Drain Current TA = 70 mA C 31 IDM 120 Pulsed Drain Current1 TA = 25 C 0.7 PD ... See More ⇒

Detailed specifications: PF610BC , PF610BL , PF610HV , PI506BZ , PI632BZ , PJ614DA , PC015BD , PC015HV , AON6380 , P2E03BK , P4004ED , P4006DV , P4402FAG , PD0903BEA , PD0903BV , PD0903BVA , PD1203BEA .

History: SFF1310Z | VSI080N06MS | IRHM7264SE | BSS138-G | KIA65R190 | AGM20P22AS | TK16A60W

Keywords - P2B60AMA MOSFET specs

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