P2B60AMA Datasheet. Specs and Replacement

Type Designator: P2B60AMA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.04 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 8.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm

Package: SOT23

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P2B60AMA datasheet

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P2B60AMA

P2B60AMA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200 @VGS = 10V 600V 40mA SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 30 V TA = 25 C 40 ID Continuous Drain Current TA = 70 mA C 31 IDM 120 Pulsed Drain Current1 TA = 25 C 0.7 PD ... See More ⇒

Detailed specifications: PF610BC, PF610BL, PF610HV, PI506BZ, PI632BZ, PJ614DA, PC015BD, PC015HV, RFP50N06, P2E03BK, P4004ED, P4006DV, P4402FAG, PD0903BEA, PD0903BV, PD0903BVA, PD1203BEA

Keywords - P2B60AMA MOSFET specs

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