All MOSFET. P2B60AMA Datasheet

 

P2B60AMA Datasheet and Replacement


   Type Designator: P2B60AMA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.04 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.3 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 8.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: SOT23
 
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P2B60AMA Datasheet (PDF)

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P2B60AMA

P2B60AMAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID200 @VGS = 10V600V 40mASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 30 VTA = 25 C40IDContinuous Drain CurrentTA = 70 mAC31IDM120Pulsed Drain Current1TA = 25 C0.7PD

Datasheet: PF610BC , PF610BL , PF610HV , PI506BZ , PI632BZ , PJ614DA , PC015BD , PC015HV , IRLZ44N , P2E03BK , P4004ED , P4006DV , P4402FAG , PD0903BEA , PD0903BV , PD0903BVA , PD1203BEA .

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