P2E03BK Datasheet. Specs and Replacement
Type Designator: P2E03BK 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.1 nS
Cossⓘ - Output Capacitance: 850 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: PDFN5X6P
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P2E03BK substitution
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P2E03BK datasheet
p2e03bk.pdf
P2E03BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 2.5m @VGS = 10V 106A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 106 ID Continuous Drain Current3 TC = 100 C 67 IDM 180 Pulsed Drain Curre... See More ⇒
Detailed specifications: PF610BL, PF610HV, PI506BZ, PI632BZ, PJ614DA, PC015BD, PC015HV, P2B60AMA, IRF530, P4004ED, P4006DV, P4402FAG, PD0903BEA, PD0903BV, PD0903BVA, PD1203BEA, PD1303YVS
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