P4006DV Datasheet. Specs and Replacement
Type Designator: P4006DV 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 256 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOP8
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P4006DV datasheet
p4006dv.pdf
P4006DV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 40m @VGS = -10V -5.9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TA = 25 C -5.9 ID Continuous Drain Current TA = 70 C -4.7 A IDM -40 Pulsed Drain ... See More ⇒
mp4006.pdf
MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) I = 2 A (max) C (DC)... See More ⇒
mp4006 .pdf
MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4006 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) IC (DC) = 2 A (m... See More ⇒
Detailed specifications: PI506BZ, PI632BZ, PJ614DA, PC015BD, PC015HV, P2B60AMA, P2E03BK, P4004ED, NCEP15T14, P4402FAG, PD0903BEA, PD0903BV, PD0903BVA, PD1203BEA, PD1303YVS, PD1503BV, PD1503YVS
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