P4006DV Datasheet and Replacement
Type Designator: P4006DV
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 256 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOP8
P4006DV substitution
P4006DV Datasheet (PDF)
p4006dv.pdf

P4006DVP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60V 40m @VGS = -10V -5.9ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TA = 25 C-5.9IDContinuous Drain CurrentTA = 70 C-4.7AIDM-40Pulsed Drain
mp4006.pdf

MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : I = 2 A (max) C (DC)
mp4006 .pdf

MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4006 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : IC (DC) = 2 A (m
Datasheet: PI506BZ , PI632BZ , PJ614DA , PC015BD , PC015HV , P2B60AMA , P2E03BK , P4004ED , AON6380 , P4402FAG , PD0903BEA , PD0903BV , PD0903BVA , PD1203BEA , PD1303YVS , PD1503BV , PD1503YVS .
History: AM4499P | BLM04N08-B | BLM05N03-D | IPS110N12N3 | DH100P40 | IPB26CN10N | AM4962NE
Keywords - P4006DV MOSFET datasheet
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History: AM4499P | BLM04N08-B | BLM05N03-D | IPS110N12N3 | DH100P40 | IPB26CN10N | AM4962NE



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