P4006DV - параметры транзистора MOSFET, его аналоги, datasheet

P4006DV Datasheet (PDF)

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P4006DVP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60V 40m @VGS = -10V -5.9ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TA = 25 C-5.9IDContinuous Drain CurrentTA = 70 C-4.7AIDM-40Pulsed Drain

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MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4006 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : I = 2 A (max) C (DC)

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MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4006 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : IC (DC) = 2 A (m

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