All MOSFET. PD1303YVS Datasheet

 

PD1303YVS Datasheet and Replacement


   Type Designator: PD1303YVS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP8
      - MOSFET Cross-Reference Search

 

PD1303YVS Datasheet (PDF)

 ..1. Size:671K  unikc
 pd1303yvs.pdf pdf_icon

PD1303YVS

PD1303YVSDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel13m @VGS =10V30V 9A Q113m @VGS =10V30V 9A Q2SOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSQ1 30VDSDrain-Source VoltageQ2 30VQ1 20VGSGate-Source VoltageQ2 20Q1 9TA = 25 CQ2 9IDC

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

Keywords - PD1303YVS MOSFET datasheet

 PD1303YVS cross reference
 PD1303YVS equivalent finder
 PD1303YVS lookup
 PD1303YVS substitution
 PD1303YVS replacement

 

 
Back to Top

 


 
.