PD1303YVS Datasheet. Specs and Replacement
Type Designator: PD1303YVS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 131 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOP8
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PD1303YVS substitution
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PD1303YVS datasheet
pd1303yvs.pdf
PD1303YVS Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 13m @VGS =10V 30V 9A Q1 13m @VGS =10V 30V 9A Q2 SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS Q1 30 VDS Drain-Source Voltage Q2 30 V Q1 20 VGS Gate-Source Voltage Q2 20 Q1 9 TA = 25 C Q2 9 ID C... See More ⇒
Detailed specifications: P2E03BK, P4004ED, P4006DV, P4402FAG, PD0903BEA, PD0903BV, PD0903BVA, PD1203BEA, BS170, PD1503BV, PD1503YVS, PD1503YVS-A, P2703BAG, P2710AD, PM505BA, PM506BA, PM509BA
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