All MOSFET. PD1303YVS Datasheet

 

PD1303YVS Datasheet and Replacement


   Type Designator: PD1303YVS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP8

 PD1303YVS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PD1303YVS Datasheet (PDF)

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PD1303YVS

PD1303YVS Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 13m @VGS =10V 30V 9A Q1 13m @VGS =10V 30V 9A Q2 SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS Q1 30 VDS Drain-Source Voltage Q2 30 V Q1 20 VGS Gate-Source Voltage Q2 20 Q1 9 TA = 25 C Q2 9 ID C... See More ⇒

Datasheet: P2E03BK , P4004ED , P4006DV , P4402FAG , PD0903BEA , PD0903BV , PD0903BVA , PD1203BEA , BS170 , PD1503BV , PD1503YVS , PD1503YVS-A , P2703BAG , P2710AD , PM505BA , PM506BA , PM509BA .

History: SI2303DS

Keywords - PD1303YVS MOSFET datasheet

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