PM505BA Datasheet and Replacement
Type Designator: PM505BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 106 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOT23
PM505BA substitution
PM505BA Datasheet (PDF)
pm505ba.pdf

PM505BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID40m @VGS = -4.5V-20V -4ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 8 VTA = 25 C-4IDContinuous Drain CurrentTA = 70 AC-3IDM-21Pulsed Drain Current1TA = 25 C0.9PDPo
pm505ba.pdf

P-Channel Enhancement Mode PM505BA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID GG. GATE -20V 40m -4A D. DRAIN S. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 8 V TA = 25 C -4 Continuous Drain Cur
Datasheet: PD0903BVA , PD1203BEA , PD1303YVS , PD1503BV , PD1503YVS , PD1503YVS-A , P2703BAG , P2710AD , 13N50 , PM506BA , PM509BA , PM513BA , PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA .
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