All MOSFET. PM506BA Datasheet

 

PM506BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PM506BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 1.3 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 3.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 5 nC
   Rise Time (tr): 13 nS
   Drain-Source Capacitance (Cd): 36 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
   Package: SOT23

 PM506BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PM506BA Datasheet (PDF)

 ..1. Size:757K  unikc
 pm506ba.pdf

PM506BA PM506BA

PM506BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V30V 3.5ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C3.5IDContinuous Drain CurrentTA = 70 AC2.8IDM20Pulsed Drain Current1TA = 25 C1.3PDW

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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