All MOSFET. PM509BA Datasheet

 

PM509BA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PM509BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT23

 PM509BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PM509BA Datasheet (PDF)

 ..1. Size:756K  unikc
 pm509ba.pdf

PM509BA PM509BA

PM509BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = 10V-30V -2ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C-2IDContinuous Drain CurrentTA = 70 AC-1.5IDM-8Pulsed Drain Current1TA = 25 C0.7PDP

 ..2. Size:211K  niko-sem
 pm509ba.pdf

PM509BA PM509BA

P-Channel Enhancement Mode PM509BANIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID GG. GATE -30V 120m -2A D. DRAIN S. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VTA = 25

Datasheet: PD1303YVS , PD1503BV , PD1503YVS , PD1503YVS-A , P2703BAG , P2710AD , PM505BA , PM506BA , STF13NM60N , PM513BA , PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA , PM557BA , PM560BZ .

History: PK5V6BA

 

 
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