PM523BA Datasheet and Replacement
Type Designator: PM523BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 46 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT23
- MOSFET Cross-Reference Search
PM523BA Datasheet (PDF)
pm523ba.pdf

PM523BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80m @VGS = -10V-30V -2.5ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-2.5IDContinuous Drain CurrentTA = 70 AC-2IDM-10Pulsed Drain
pm523ba.pdf

PM523BA P-Channel Enhancement Mode NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1: GATE G2: DRAIN -30V 80m -2.5A 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V T
ppm523t201e0.pdf

PPM523T201E0 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(mA) 0.6@ VGS=-4.5V G1 -20 0.9@ VGS=-2.5V 300 1.5@ VGS=-1.8V S2Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage VDS -20 VGa
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SPD04N60S5 | SM6A12NSFP | FCPF7N60YDTU
Keywords - PM523BA MOSFET datasheet
PM523BA cross reference
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History: SPD04N60S5 | SM6A12NSFP | FCPF7N60YDTU



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