PM523BA - Даташиты. Аналоги. Основные параметры

PM523BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80m @VGS = -10V -30V -2.5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -2.5 ID Continuous Drain Current TA = 70 A C -2 IDM -10 Pulsed Drain

PM523BA P-Channel Enhancement Mode NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 GATE G 2 DRAIN -30V 80m -2.5A 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V T

PPM523T201E0 P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D 3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(mA) 0.6@ VGS=-4.5V G 1 -20 0.9@ VGS=-2.5V 300 1.5@ VGS=-1.8V S 2 Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage VDS -20 V Ga