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PM557BA Spec and Replacement


   Type Designator: PM557BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23

 PM557BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PM557BA Specs

 ..1. Size:768K  unikc
 pm557ba.pdf pdf_icon

PM557BA

PM557BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = -4.5V -30V -3.3A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 12 V TA = 25 C -3.3 ID Continuous Drain Current TA = 70 A C -2.6 IDM -16 Pulsed Drain Current1 TA = 25 C 0.9 ... See More ⇒

 ..2. Size:217K  niko-sem
 pm557ba.pdf pdf_icon

PM557BA

P-Channel Enhancement Mode PM557BA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -30V 48m -3.3A G S Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Application... See More ⇒

Detailed specifications: PM506BA , PM509BA , PM513BA , PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA , IRFZ24N , PM560BZ , PM561BA , PM597BA , PM600BZ , PM606BA , P2503BDG , P2503HEA , P2503HVG .

History: PM600BZ

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