All MOSFET. PM557BA Datasheet

 

PM557BA Datasheet and Replacement


   Type Designator: PM557BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
 

 PM557BA substitution

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PM557BA Datasheet (PDF)

 ..1. Size:768K  unikc
 pm557ba.pdf pdf_icon

PM557BA

PM557BAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = -4.5V-30V -3.3ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 12 VTA = 25 C-3.3IDContinuous Drain CurrentTA = 70 AC-2.6IDM-16Pulsed Drain Current1TA = 25 C0.9

 ..2. Size:217K  niko-sem
 pm557ba.pdf pdf_icon

PM557BA

P-Channel Enhancement Mode PM557BANIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-FreePRODUCT SUMMARY DV(BR)DSS RDS(ON) ID -30V 48m -3.3A GSFeatures Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Application

Datasheet: PM506BA , PM509BA , PM513BA , PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA , AON6380 , PM560BZ , PM561BA , PM597BA , PM600BZ , PM606BA , P2503BDG , P2503HEA , P2503HVG .

History: FTK2N65P

Keywords - PM557BA MOSFET datasheet

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