All MOSFET. PM560BZ Datasheet

 

PM560BZ Datasheet and Replacement


   Type Designator: PM560BZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: SOT23
 
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PM560BZ Datasheet (PDF)

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PM560BZ

PM560BZN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID88m @VGS = 10V60V 3ASOT-23ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60 VVGSGate-Source Voltage 20 VTC = 25 C3IDContinuous Drain CurrentTC = 70 C1.9 AIDM12Pulsed Drain Current1T

Datasheet: PM509BA , PM513BA , PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA , PM557BA , IRF830 , PM561BA , PM597BA , PM600BZ , PM606BA , P2503BDG , P2503HEA , P2503HVG , P2503NVG .

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