PM560BZ Datasheet. Specs and Replacement
Type Designator: PM560BZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: SOT23
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PM560BZ substitution
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PM560BZ datasheet
pm560bz.pdf
PM560BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 88m @VGS = 10V 60V 3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V TC = 25 C 3 ID Continuous Drain Current TC = 70 C 1.9 A IDM 12 Pulsed Drain Current1 T... See More ⇒
Detailed specifications: PM509BA, PM513BA, PM514BA, PM516BA, PM516BZ, PM523BA, PM550BA, PM557BA, 2N60, PM561BA, PM597BA, PM600BZ, PM606BA, P2503BDG, P2503HEA, P2503HVG, P2503NVG
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