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PM560BZ Spec and Replacement


   Type Designator: PM560BZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: SOT23

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PM560BZ Specs

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PM560BZ

PM560BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 88m @VGS = 10V 60V 3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V TC = 25 C 3 ID Continuous Drain Current TC = 70 C 1.9 A IDM 12 Pulsed Drain Current1 T... See More ⇒

Detailed specifications: PM509BA , PM513BA , PM514BA , PM516BA , PM516BZ , PM523BA , PM550BA , PM557BA , 2N60 , PM561BA , PM597BA , PM600BZ , PM606BA , P2503BDG , P2503HEA , P2503HVG , P2503NVG .

History: CJU10N10

Keywords - PM560BZ MOSFET specs

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